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? freescale semiconductor, inc., 2004, 2005. all rights reserved. freescale semiconductor advance information this document contains information on a new product. specificatio ns and information herein are su bject to change without notice . document number: MMM6025 rev. 5.1, 03/2005 MMM6025 package information case 1603-2 9.85 9.0 1.4 mm hdi (organic multi-chip module) ordering information device operating temp. range package MMM6025 ?20 to 70 c hdi module MMM6025r2 ?20 to 70 c hdi module tape and reel 1 introduction the MMM6025 is a 50 ? tx power amplifier front-end module for quad- and tri-band gsm/gprs handset applications, functioning over the gsm850, egsm, dcs, and pcs transm it and receive frequency bands. it is compatible with gsm/gprs class 12 operating modes. to simplify radio front-end design requirements, power ampl ification, power coupling, power detection, low pass filtering, and antenna switching functions are integrated into the power amplifier front-end module. tr ansmit/receive path and enable functions are cont rolled through 0/2.8 v logic inputs. MMM6025 quad-band gsm/gprs power amplifier front-end module with pa and antenna switch contents 1 introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 functional block diagram . . . . . . . . . . . . . . . 2 3 electrical characteristics . . . . . . . . . . . . . . . 2 4 rf specifications . . . . . . . . . . . . . . . . . . . . . . 4 5 signal descriptions . . . . . . . . . . . . . . . . . . . 11 6 package information . . . . . . . . . . . . . . . . . . 14 7 product documentation . . . . . . . . . . . . . . . . 16 http://www..net/ datasheet pdf - http://www..net/
MMM6025 advance information, rev. 5.1 2 freescale semiconductor functional block diagram 2 functional block diagram figure 1 is a functional block diagram of the qua d-band (gsm850, egsm, dc s, and pcs) power amplifier module. figure 1. functional block diagram 3 electrical characteristics table 1. maximum ratings rating symbol value unit drain supply voltages vdd 7.0 v rf input power p in 11 dbm operating (ambient) temperature range t a ?20 to 70 " c storage temperature ts t g ?40 to 125 " c junction temperature t j 125 " c note: maximum ratings and esd 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the electrical characteristi cs or recommended operating conditions tables. 2. esd (electrostatic discharge) imm unity meets human body model (hbm) $ 150 v and machine model (mm) $ 50 v. additional esd data available upon request. bias control match match match pre- driver driver final match match match pre- driver driver final vdet vref power detection en_det vddb_hb, vdd1_hb vdd3_hb vddb_lb, vdd1_lb vdd3_lb txin_hb txin_lb antenna MMM6025 gsm/gprs pa module 850/900/1800/1900 vapc vreg_2.8 en_tx vdd2_hb vdd2_lb rx_cel rx_gsm rx_pcs rx_dcs antenna control eub_us lowb_high en_ant_tx sp6t match harmonic filter coupler match coupler bias control match match match pre- driver driver final match match match pre- driver driver final vdet vref power detection en_det vdet vref power detection en_det_pa vddb_hb, vdd1_hb vdd3_hb vddb_lb, vdd1_lb vdd3_lb txin_hb txin_lb antenna antenna vapc vreg_2.8 vdd2_hb vdd2_lb rx_cel rx_gsm rx_cel rx_cel rx_gsm rx_gsm rx_pcs rx_dcs antenna control eub_us lowb_high en_ant_tx antenna control eub_us lowb_high en_ant_tx sp6t sp6t match match match match harmonic filter http://www..net/ datasheet pdf - http://www..net/
electrical characteristics MMM6025 advance information, rev. 5.1 freescale semiconductor 3 table 2. recommended operating conditions characteristic symbol min typ max unit drain supply voltage vdd 2.8 3.2 4.5 v power control ramp voltage v ramp 0.1 - 2.2 v rf input power p in 5 - 11 dbm table 3. dc specifications characteristic symbol min typ max unit voltage pa i (drain supplies) transmitter off transmitter on vdd (tx_off) vdd (tx_on) - 2.8 3.6 3.2 7.0 4.5 vdc pa output control voltage v apc 0.1 0.2 to 2.1 2.2 v pa output control current i apc -3.0 - 3.5 ma detector pa enable voltage 1 high low v en_det_pa(h) v en_det_pa(l) 2.5 0 - - 2.9 0.3 vdc detector pa enable current 1 source sink i en_det_pa(h) i en_det_pa(l) - - - - 2.0 10 ma a mode select voltage us (selects gsm850 or pcs) eu (selects egsm or dcs) v eub_us(h) v eub_us(l) 2.5 0 - - 2.9 0.3 vdc rx band select current source sink i eub_us(h) i eub_us(l) - - - - 0.1 10 ma a tx antenna enable voltage high low v en_ant_tx(h) v en_ant_tx(l) 2.5 0 - - 2.9 0.3 vdc tx antenna enable current source sink i en_ant_tx(h) i en_ant_tx(l) - - - - 0.1 10 ma a voltage pa 2 (regulated supply) v reg28 2.65 - 2.9 v current draw i reg28 - - 18 ma band select high (dcs/pcs bands selected) low (gsm850/egsm bands selected) v lowb_high(h) v lowb_high(l) 2.5 0 - - 2.9 0.3 v http://www..net/ datasheet pdf - http://www..net/
MMM6025 advance information, rev. 5.1 4 freescale semiconductor rf specifications the following table provides additi onal details on MMM6025 orderable parts. 4 rf specifications this section details specifications fo r the egsm, dcs, gsm850, and pcs bands. band select current level high low i lowb_high(h) i lowb_high(l) - - - - 10 10 a total module leakage current (standby condition) en_det_pa = 0.3 v eub_us = en_ant_tx = +0.3 v lowb_high = 0.3 v v apc = 0.1 v v reg_in = 0 v or 2.775 v temp = 23 to 27 " c vdd = 3.8 v i vdd(off) - 5.0 7.0 a 1 the MMM6025 pinout is compatible with that of mmm6022, except pin 8. MMM6025 signal en_det_pa (pin 16) is equivalent to a co mbination of both mmm6022 signals en_tx and en_det. table 4. orderable parts details device operating temp. range (ta) package rohs compliant pb-free msllevel soldertemp. MMM6025 ?20 " to 70 " c hdi module yes yes 3 250 c MMM6025r2 ?20 " to 70 " c hdi module tape and reel yes yes 3 250 c table 5. egsm band specifications characteristic symbol min typ max unit egsm band (p in = 5.0 to 11 dbm, vdd = 3.2 vdc, v apc = 0.1 to 2.2 v pulsed, 25% duty cycle, lowb_high = low, eub_us = low, t c = 25 " c 5 " c, unless otherwise noted.) operating frequency transmit receive f 880 925 - - 915 960 mhz power out p o(max) 33 - - dbm power out low voltage (vdd = 2.8 v) p o(min) 32 - - dbm power added efficiency (saturated p out ) pae 40 44 - % power control range 1 p o(range) 35 - - db power control slope 2 % v det / % v apc - - 3.0 v/v table 3. dc specifications (continued) characteristic symbol min typ max unit http://www..net/ datasheet pdf - http://www..net/
rf specifications MMM6025 advance information, rev. 5.1 freescale semiconductor 5 power control frequency 3.0 db bw pc3db 1.0 - - mhz power control response time 3 t pc - - 1.5 s forward isolation 4 iso1 iso2 - - - - -41 -22 dbm power detector voltage 1 low power high power v det(low) v det(high) 40 1.0 - - 150 2.05 mv v harmonics 5 (p out max = 33 dbm) 2f 0 ? 15f 0 - - -33 dbm gsm rx band noise 5 (vdd = 4.2 v, saturated p out ) (p out = 33 dbm) n rx (925 to 935 mhz) - - -73 dbm/ 100 khz n rx (935 to 960 mhz) - - -84 dbm/ 100 khz p out over temp (vdd = 2.8 v, t a = -20 to 70 " c) p o_ot(min) 31.5 - - dbm insertion loss from antenna to rx_gsm 5 il_rx - - 1.4 db tx - rx isolation 5 antenna to rx_cel antenna to rx_gsm antenna to rx_dcs antenna to rx_pcs iso_ant_rx_cel iso_ant_rx_gsm iso_ant_rx_dcs iso_ant_rx_pcs 27 27 27 27 - - - - - - - - db input vswr vswr - - 2:1 power out change due to coupling variations (vswr = 3:1 @ ant port) 6 cplv -1.5 - 1.5 db load mismatch stress (ruggedness) 7 rugg no performance degradation and no module damage stability - spurious output 8 stab - - -36 dbm closed loop power variation over temperature 9 p out _temp ambient 1 (p out = 6 dbm) p out _temp ambient 2 (p out = 20 dbm) p out _temp ambient 3 (p out = 33 dbm) -1.5 1.0 -0.5 - - - 1.5 1.0 0.5 db db db 1 power output must be monotonic with power detector voltage. (vdd = 2.8v to 4.5v and temperature = -20 to +70c) 2 vdd = 2.8v to 4.5v and temperature = -20 to +70c 3 measurement made from 50% of v apc to 10%/90% of v det_out final value, with pulsed v apc with a peak voltage in the range of 0.1 to 2.2 v and both rise and fall edges. 4 measured at antenna port, iso1: p in = -10 dbm, en_ant_tx = 0 v, v apc = 0.1 v; iso2: p in = 11 dbm, en_ant_tx = 2.723 v, v apc = 0.1 v. (vdd = 2.8v to 4.5v and temperature = -20 to +70c) 5 vdd = 2.8v to 4.5v and temperature = -20 to +70c 6 maintaining constant vdet-vref at all mismat ch phase angles. measured at antenna port: p out = 33 dbm 7 output vswr = 20:1 all phase angles, vdd = 2.8v to 4.5v, pin = 5dbm to 11dbm, temperature = -20 to +70c, power less than or equal to 33dbm. table 5. egsm band specifications (continued) characteristic symbol min typ max unit http://www..net/ datasheet pdf - http://www..net/
MMM6025 advance information, rev. 5.1 6 freescale semiconductor rf specifications 8 output vswr = 10:1 all phase angles, vdd = 2.8v to 4.5v, pin = 5dbm to 11dbm, temperature = -20 to +70c, power less than or equal to 33dbm. 9 vdiff_var = 20*log(delta(t)/delta(25c)), where t is -20 to 65 c, delta(t)= [vdiff(t) with rf ] - [vdiff(t) without rf], and delta(25c)= [vdiff(25c) with rf] - [vdiff(25c) without rf] table 6. dcs band specifications characteristic symbol min typ max unit dcs band (p in = 5.0 to 11 dbm, vdd = 3.2 vdc, v apc = 0.1 to 2.2 v pulsed, 25% duty cycle, lowb_high = high, eub_us = low, t c = 25 " c 5 " c, unless otherwise noted.) operating frequency transmit receive f 1710 1805 - - 1785 1880 mhz power out p o(max) 30 - - dbm power out low voltage (vdd = 2.8 v) p o(min) 29 - - dbm power added efficiency (saturated p out ) pae 28 33 - % power control range 1 p o(range) 35 - - db power control slope 2 % v det / % v apc - - 3.5 v/v power control frequency 3.0 db bw pc3db 1.0 - - mhz power control response time 3 t pc - - 1.5 s forward isolation 4 iso1 iso2 - - - - -53 -25 dbm power detector voltage 1 low power high power vdet(low) vdet(high) 40 1.0 - - 150 2.05 mv v harmonics 6 (p out max = 30 dbm) 2f 0 ? 15f 0 - - -33 dbm rx band noise 5 ,6 (p out = 30 dbm) n rx - - -77 dbm/ 100 khz p out over temp (vdd = 2.8 v, t a = ?20 to 70c) p o_ot(min) 28.5 - - dbm insertion loss from antenna to rx_dcs 6 il_rx - - 1.7 db tx - rx isolation 6 antenna to rx_cel antenna to rx_gsm antenna to rx_dcs antenna to rx_pcs iso_ant_rx_cel iso_ant_rx_gsm iso_ant_rx_dcs iso_ant_rx_pcs 27 27 27 27 - - - - - - - - db input vswr vswr - - 2:1 power out change due to coupling variations (vswr = 3:1 @ ant port) 7 cplv -1.5 - 1.5 db load mismatch stress (ruggedness) 8 rugg no performance degradation and no module damage http://www..net/ datasheet pdf - http://www..net/
rf specifications MMM6025 advance information, rev. 5.1 freescale semiconductor 7 stability - spurious output 9 stab - - -36 dbm closed loop power variation over temperature 10 p out _temp ambient 1 (p out = 3 dbm) p out _temp ambient 2 (p out = 15 dbm) p out _temp ambient 3 (p out = 30 dbm) -1.5 1.0 -0.5 - - - 1.5 1.0 0.5 db db db 1 power output must be monotonic with power detector voltage. (vdd = 2.8v to 4.5v and temperature = -20 to +70c) 2 vdd = 2.8v to 4.5v and temperature = -20 to +70c 3 measurement made from 50% of v apc to 10%/90% of v det_out final value, with pulsed v apc with a peak voltage in the range of 0.1 to 2.2 v and both rise and fall edges. 4 measured at antenna port: iso1: p in = -10 dbm, en_ant_tx = 0 v, v apc = 0.1 v; iso2: p in = 11 dbm, en_ant_tx = 2.723 v, v apc = 0.1 v. (vdd = 2.8v to 4.5v and temperature = -20 to +70c) 5 dcs rx band = 1805 to 1880 mhz. vdd = 4.2v, saturated p out . 6 vdd = 2.8v to 4.5v and temperature = -20 to +70c 7 maintaining constant vdet-vref at all mismat ch phase angles. measured at antenna port: p out = 30 dbm 8 vswr = 20:1 all phase angles, vdd = 2.8v to 4.5v, pin = 5dbm to 11dbm, temperature = -20 to +70c, power less than or equal to 30 dbm 9 output vswr = 10:1 all phase angles, vdd = 2.8v to 4.5v, pin = 5dbm to 11dbm, temperature = -20 to +70c, power less than or equal to 30dbm. 10 vdiff_var = 20*log(delta(t)/delta(25c)), where t is -20 to 65 c, delta(t)= [vdiff(t) with rf ] - [vdiff(t) without rf], and delta(25c)= [vdiff(25c) with rf] - [vdiff(25c) without rf] table 7. gsm850 band specifications characteristic symbol min typ max unit gsm850 band (p in = 5.0 to 11 dbm, vdd = 3.2 vdc, v apc = 0.1 to 2.2 v pulsed, 25% duty cycle, lowb_high = low, eub_us = high, t c = 25 " c 5 " c, unless otherwise noted.) operating frequency transmit receive f 824 869 - - 849 894 mhz power out p o(max) 33 - - dbm power out low voltage (v cc_pa = 2.8 v) p o(min) 32 - - dbm power added efficiency (saturated p out ) pae 38 43 - % power control range 1 p o(range) 35 - - db power control slope 2 % v det / % v apc - - 3.0 v/v power control frequency 3.0 db bw pc3db 1.0 - - mhz power control response time 3 t pc - - 1.5 s forward isolation 4 iso1 iso2 - - - - -41 -22 dbm table 6. dcs band specifications (continued) characteristic symbol min typ max unit http://www..net/ datasheet pdf - http://www..net/
MMM6025 advance information, rev. 5.1 8 freescale semiconductor rf specifications power detector voltage 1 low power high power vdet(low) vdet(high) 40 1.0 - - 150 2.05 mv v harmonics 6 (p out max = 33 dbm) 2f 0 ? 15f 0 - - -33 dbm gsm850 rx band noise 5 ,6 (p out = 33 dbm) n rx - - -84 dbm/ 100 khz p out over temp (vdd = 2.8 v, t a = -20 to 70c) p o_ot(min) 31.5 - - dbm insertion loss from antenna to rx_gsm850 6 il_rx - - 1.4 db tx - rx isolation 6 antenna to rx_cel antenna to rx_gsm antenna to rx_dcs antenna to rx_pcs iso_ant_rx_cel iso_ant_rx_gsm iso_ant_rx_dcs iso_ant_rx_pcs 27 27 27 27 - - - - - - - - db input vswr vswr - - 2:1 power out change due to coupling variations (vswr =3:1 @ ant port) 7 cplv -1.5 - 1.5 db load mismatch stress (ruggedness) 8 rugg no performance degradation and no module damage stability - spurious output 9 stab - - ?36 dbm closed loop power variation over temperature 10 p out _temp ambient 1 p out = 6 dbm p out _temp ambient 2 p out = 20 dbm p out _temp ambient 3 p out = 33 dbm -1.5 db 1.0 db -0.5 db - - - 1.5db 1.0 db 0.5 db db db db 1 power output must be monotonic with power detector voltage. (vdd = 2.8v to 4.5v and temperature = -20 to +70c) 2 vdd = 2.8v to 4.5v and temperature = -20 to +70c 3 measurement made from 50% of v apc to 10%/90% of v det_out final value, with pulsed v apc with a peak voltage in the range of 0.1 to 2.2 v and both rise and fall edges. 4 measured at antenna port: iso1: p in = -10 dbm, en_ant_tx = 0 v, v apc = 0.1 v; iso2: p in = 11 dbm, en_ant_tx = 2.723 v, v apc = 0.1 v. (vdd = 2.8v to 4.5v and temperature = -20 to +70c) 5 gsm850 rx band = 869 to 894 mhz. vdd = 4.2 v, saturated p out . 6 vdd = 2.8v to 4.5v and temperature = -20 to +70c 7 maintaining constant vdet-vref at all mismat ch phase angles. measured at antenna port: p out = 33 dbm 8 vswr = 20:1 all phase angles, vdd = 2.8v to 4.5v, pin = 5dbm to 11dbm, temperature = -20 to +70c, power less than or equal to 33dbm 9 output vswr = 10:1 all phase angles, vdd = 2.8v to 4.5v, pin = 5dbm to 11dbm, temperature = -20 to +70c, power less than or equal to 33dbm. 10 vdiff_var = 20*log(delta(t)/delta(25c)), where t is -20 to 65 c, delta(t)= [vdiff(t) with rf ] - [vdiff(t) without rf], and delta(25c)= [vdiff(25c) with rf] - [vdiff(25c) without rf] table 7. gsm850 band specifications (continued) characteristic symbol min typ max unit http://www..net/ datasheet pdf - http://www..net/
rf specifications MMM6025 advance information, rev. 5.1 freescale semiconductor 9 table 8. pcs band specifications characteristic symbol min typ max unit pcs band (p in = 5.0 to 11 dbm, vdd = 3.2 vdc, v apc = 0.1 to 2.2 v pulsed, 25% duty cycle, lowb_high = high, eub_us = high, t c = 25 " c 5 " c, unless otherwise noted.) operating frequency transmit receive f 1850 1930 - - 1910 1990 mhz power out p o(max) 30 - - dbm power out low voltage (vdd = 2.8 v) p o(min) 29 - - dbm power added efficiency (saturated p out ) pae 28 33 - % power control range 1 p o(range) 35 - - db power control slope 2 % v det / % v apc - - 3.5 v/v power control frequency 3.0 db bw pc3db 1.0 - - mhz power control response time 3 t pc - - 1.5 s forward isolation 4 iso1 iso2 - - - - -53 -25 dbm power detector voltage 1 low power high power vdet(low) vdet(high) 40 1.0 - - 150 2.05 mv v harmonics 6 (p out max = 30 dbm) 2f 0 ? 15f 0 - - -33 dbm rx band noise 5 ,6 (p out = 30 dbm) n rx - - -77 dbm/100 khz p out over temp (vdd = 2.8 v, t a = -20 to 70c) p o_ot(min) 28.5 - - dbm insertion loss from antenna to rx_pcs 6 il_rx - - 1.7 db tx - rx isolation 6 ant to rx_cel ant to rx_gsm ant to rx_dcs ant to rx_pcs iso_ant_rx_cel iso_ant_rx_gsm iso_ant_rx_dcs iso_ant_rx_pcs 27 27 27 27 - - - - - - - - db input vswr vswr - - 2:1 power out change due to coupling variations (vswr = 3:1 @ ant port) 7 cplv -1.5 - 1.5 db load mismatch stress (ruggedness) 8 rugg no performance degradation or module damage http://www..net/ datasheet pdf - http://www..net/
MMM6025 advance information, rev. 5.1 10 freescale semiconductor rf specifications stability - spurious output 9 stab - - -36 dbm closed loop power variation over temperature 10 p out _temp ambient 1 p out = 3 dbm p out _temp ambient 2 p out = 15 dbm p out _temp ambient 3 p out = 30 dbm -1.5 db 1.0 db -0.5 db - - - 1.5db 1.0 db 0.5 db db db db 1 power output must be monotonic with po wer detector voltage. (vdd = 2.8v to 4. 5v and temperature = -20 to +70 c) 2 vdd = 2.8v to 4.5v and temperature = -20 to +70 c 3 measurement made from 50% of v apc to 10%/90% of v det_out final value, with pulsed v apc with a peak voltage in the range of 0.1 to 2.2 v and both rise and fall edges. 4 measured at antenna port, iso1: p in = -10 dbm, en_ant_tx = 0 v, v apc = 0.1 v; iso2: p in = 11 dbm, en_ant_tx = 2.723 v, v apc = 0.1. (vdd = 2.8v to 4.5v and temperature = -20 to +70 c) 5 pcs rx band = 1930 to 1990 mhz. vdd = 4.2 v, saturated p out . 6 vdd = 2.8v to 4.5v and temperature = -20 to +70 c 7 maintaining constant vdet-vref at all mismat ch phase angles. measured at antenna port: p out = 30 dbm 8 vswr = 20:1 all phase angles, vdd = 2.8v to 4.5v, pin = 5dbm to 11dbm, temperature = -20 to +70c, power less than or equal to 30 dbm 9 output vswr = 10:1 all phase angles, vdd = 2.8v to 4.5v, pin = 5dbm to 11dbm, temperature = -20 to +70c, power less than or equal to 30dbm. 10 vdiff_var = 20*log(delta(t)/delt a(25c)), where t is -20 to 65c, delta(t)= [vdiff(t) with rf] - [vdi ff(t) without rf], and delta(25c)= [vdiff(25c) with rf] - [vdiff(25c) without rf] table 8. pcs band specifications (continued) characteristic symbol min typ max unit http://www..net/ datasheet pdf - http://www..net/
signal descriptions MMM6025 advance information, rev. 5.1 freescale semiconductor 11 5 signal descriptions figure 2. pin out table 9. contact connections section signal description pin(s) rf txin_lb tx input (low bands), dc blocked 6 txin_hb tx input (high bands), dc blocked 4 ant antenna 21 rx_gsm rx output (gsm band) 23 rx_dcs rx output (dcs band) 27 rx_cel rx output (cel band) 25 rx_pcs rx output (pcs band) 29 vdd3_hb vapc txin_hb txin_lb vreg28 ant gnd en_det_pa vref vdet gnd en_ant_tx gnd lowb_high gnd nc gnd gnd eub_us gnd gnd vdd3_lb rx_dcs rx_pcs rx_gsm rx_cel gnd vddb_hb + vdd1_hb 16 13 15 14 10 11 12 17 25 21 19 23 18 26 29 30 34 33 32 27 2 6 8 4 9 1 MMM6025 (top view through package) 9.85 mm ! 9.0 mm ( & 0.1 mm) 3 7 5 31 28 24 20 22 vdd2_hb vdd2_lb vddb_lb + vdd1_lb gnd gnd gnd http://www..net/ datasheet pdf - http://www..net/
MMM6025 advance information, rev. 5.1 12 freescale semiconductor signal descriptions supply vddb_lb dc supply (battery) for bi as control (low bands) 10 vdd1_lb dc supply (battery) for pre-driver (low bands) vdd2_lb dc supply (battery) for driver stage (low bands) 11 vdd3_lb dc supply (battery) for final stage (low bands) 12 vddb_hb dc supply (battery) for bias control (high bands) 34 vdd1_hb dc supply (battery) for pre-driver (high bands) vdd2_hb dc supply (battery) for driver stage (high bands) 33 vdd3_hb dc supply (battery) for final stage (high bands) 32 vreg28 dc reference supply (regulated) 13 control vapc analog power control 2 lowb_high band select low (cel, gsm)/high (dcs,pcs) 17 en_ant_tx enable tx antenna switch path 18 eub_us mode select eu (gsm , dcs)/us (cel, pcs) 19 en_det_pa enable detector and power amplifier 1 16 power detection vdet detected output of detector 15 vref reference output of detector 14 ground gnd ground 3, 5, 7, 20, 22, 24, 26, 28, 31, 1, 9, 30 1 the MMM6025 pinout is compatible with that of mmm6022, except pin 8. MMM6025 signal en_det_pa (pin 16) is equivalent to a co mbination of both mmm6022 signals en_tx and en_det. table 10. logic states eub_us lowb_high en_an_tx mode band(s) high low high tx gsm850 low low high tx egsm low high high tx dcs high high high tx pcs high low low rx gsm850 low low low rx egsm low high low rx dcs high high low rx pcs table 9. contact connections (continued) section signal description pin(s) http://www..net/ datasheet pdf - http://www..net/
signal descriptions MMM6025 advance information, rev. 5.1 freescale semiconductor 13 figure 3 shows the top view of the MMM6025 demoboard appli cation schematic. figure 3. demoboard application schematic 1 2 3 4 5 6 7 8 9 26 25 24 23 22 21 20 19 18 27 28 29 30 31 32 33 34 17 16 15 14 13 12 11 10 c16 c17 c18 c19 ant eub_us en_ant_tx lowb_high en_det_pa vdet vref c14 c13 txin_lb txin_hb vdd2_lb vreg28 c12 c2 c3 n.c. c11 vapc vdd1_hb c6 MMM6025 top view vdd2_hb vdd3_hb c10 c9 c8 c7 c4 c5 vdd3_lb vdd1_lb c1 rx_gsm rx_dcs rx_pcs rx_cel c1=c2=c6=c7=0.1 f c3=c5=c8=c10=10 f c4 = c9 = 1 f c11 = 2.2nf c12 = 0.01 f c13 = 100pf c14=c16=c17= c18 = c19 = 33pf http://www..net/ datasheet pdf - http://www..net/
MMM6025 advance information, rev. 5.1 14 freescale semiconductor package information 6 package information figure 4 shows the MMM6025 9.85 ! 9.0 ! 1.4 mm hdi package case outline. figure 5 on page 15 shows the bottom view. figure 4. package outline http://www..net/ datasheet pdf - http://www..net/
package information MMM6025 advance information, rev. 5.1 freescale semiconductor 15 figure 5. package outline?bottom view http://www..net/ datasheet pdf - http://www..net/
document number: MMM6025 rev. 5.1 03/2005 how to reach us: home page: www.freescale.com e-mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1-800-521-6274 or +1-480-768-2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1-8-1, shimo-meguro, meguro-ku, tokyo 153-0064, japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only : freescale semiconductor lite rature distribution center p.o. box 5405 denver, colorado 80217 1-800-521-6274 or 303-675-2140 fax: 303-675-2150 ldcforfreescalesemiconductor@hibbertgroup.com information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circui ts or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpos e, nor does freescale se miconductor assume any liability arising out of the application or use of any product or circuit, and sp ecifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor dat a sheets and/or specificat ions can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor d oes not convey any lice nse under its patent rights nor the rights of others. freescale semiconduc tor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other ap plications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal inju ry or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semico nductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against a ll claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale? and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2004, 2005. all rights reserved. 7 product documentation this data sheet is labele d as a particular type: pr oduct preview, advance information, or technical data. definitions of these types are available at: http://www.freescal e.com on the documentation page. table 11 summarizes revisions to this documen t since the previous release (rev. 5). table 11. revision history location revision mulitple locations changed case temp to ambient temp. added tape and reel and lead free information. http://www..net/ datasheet pdf - http://www..net/

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